16.00

S1-01

SemiTEq technological equipment for nanoelectronics . S.I. Petrov¹, A.N. Alexeev¹, D.M. Krasovitsky², V.P. Chaly². 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia.

16.20

S1-02

Structural diagnostics, elemental and characteristic analysis of modern micro- and nanosystems using analytical SEM/FIB tools . A. Tagachenkov¹, E. Zenova¹, Y. Anufriev¹, V. Dubrovinskiy² . 1. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, Moscow, Russia. 2. JSC "NPO Sernia", Moscow, Russia .

16.40

S1-03

Ultra High Resolution AFM Imaging . M. Minin. INTERTECH Corp., Moscow, Russia.

17.00

S1-04

Oxford Instruments Plasma Technology equipment for the micro- and nano- engineering of materials for semiconductor, optoelectronics, MEMS and other applications . K. Kuvaev, A. Krynin. Technoinfo Limited, Moscow, Russia.

17.20

S1-05

Novel Vion Plasma FIB system for nano- and micro- electronics application by FEI Company . A. Poletaev, I. Bredikhin. Technoinfo Limited, Moscow, Russia.

17.40

S1-06

Modern semiconductor equipment for metrology and failure analysis by Hitachi High Technologies . E. Kremer . JSC InterLab, Moscow, Russia .

9.00

L1-01

INVITED: New materials and structures in future ULSI generation . A. Orlikovsky, V. Vyurkov . Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

9.40

L1-02

INVITED: New devices and materials for ultra low power operation . F. Balestra . Sinano Institute, IMEP-Minatec (CNRS-Grenoble INP, UJF), France .

10.20

L1-03

INVITED: SiGe and Ge: selective epitaxial growth and application in advanced MOS devices. A. Hikavyy, B. Vincent, W. Vanherle, J. Dekoster, L. Witters, H. Bender, A. Thean, R. Loo. IMEC, Leuven, Belgium.

11.00

L1-04

INVITED: Bumpless interconnects technology for wafer-based three-dimensional integration (3DI). T. Ohba. Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo.

12.00

qL-01

INVITED: Dressed state amplification by a superconducting qubit. G. Oelsner^a, P. Macha^a, E. Ilichev^a, U. Huebner^a, H.-G. Meyer^a, M. Grajcar^b, O. Astafiev^c. ^a Institute of Photonic Technology, Jena, Germany. ^bDepartment of Experimental Physics, Comenius University, Bratislava, Slovakia, ^cNEC Nano Electronics Research Laboratories. Tsukuba, Ibaraki, Japan .

12.30

qL-02

INVITED: Quantum correlations: entanglement and discord in the simplest physical systems. E.B. Fel'dman, E.I. Kuznetsova, M.A. Yurishchev, A.I. Zenchuk. Institute of Problems of Chemical Physics, Chernogolovka, Russia .

13.00

qL-03

INVITED: Fingerprinting based algorithms for quantum branching programs. F. Ablayev^1,2. 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

13.30

qL-04

INVITED: Mathematical modeling of quantum noise and the quality of hardware components of quantum computers. Yu.I. Bogdanov ¹ , A.Yu. Chernyavskiy¹, A.S. Holevo², V.F. Luckichev¹, S.A. Nuyanzin^1,3, A.A. Orlikovsky ¹. ¹ Institute of Physics and Technology, Russian Academy of Sciences. ² Steklov Mathematical Institute, Russian Academy of Sciences. ³ National Research University of Electronic Technology MIET .

14.40

O1-01

INVITED: Qualification of deep-submicron OTP poly-fuse memory. N. Belova ¹ , D. Allman¹, S. Tibbitts² . 1. ON Semiconductor, Phoenix, AZ, USA. 2. Jet City Electronics Inc., Seattle, WA, USA.

15.10

O1-02

Recording of information in nanostructures of transition metal silicides . A.S. Sigov¹, B.M. Darinskiy³, L.A. Bityutskaya², O.V.Ovchinnikov², M.S.Smirnov², M.V.Grechkina², A.P.Lazarev³, G.A.Veligura⁴, A.V.Tuchin³, E.V.Bogatikov ³ . 1. MIREA,Moscow, Russia. 2. VSU, Voronezh, Russia. 3. Rosbiokvant Ltd., Voronezh, Russia. 4. Scientific Research Institute of Electronic Engineering, Voronezh, Russia .

15.30

O1-03

Study of the resistive switching mechanism in Pt/ZrO_x/HfO₂/p⁺⁺-Si stacks by hard X-ray photoelectron spectroscopy . Yu. Matveyev ¹ , A. Zenkevich¹, Yu. Lebedinskii¹, S. Thiess², W. Drube² . 1. NRNU "Moscow Engineering Physics Institute", Moscow, Russia. 2. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany.

15.50

O1-04

Switching of domains in ferroelectric domain boundary. B.M. Darinskiy¹, A.P. Lazarev², A.S. Sigov³. 1. VSU, Voronezh, Russia. 2. Rosbiokvant Ltd., Voronezh, Russia. 3. MIREA, Moscow, Russia .

14.40

q1-01

Quantum correlations (entanglement, discord), quantum phase transitions, and magnetic toroidal states in an anti-ferromagnetic XXZ chain of spins S= ? in the presence of an inhomogeneous transverse magnetic field. A.A. Kokin . Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia

15.10

q1-02

INVITED: Quantum and classical correlations in high temperature dynamics of two coupled large spins. V.E. Zobov. L.V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia .

15.40

q1-03

Quantum computer on multi-atomic ensembles in quantum electrodynamic cavity. F.M. Ablayev ^1,2 , S.N. Andrianov ^1,2,3 , S.A. Moiseev ^1,2,3 , A.V. Vasiliev ^1,2 . 1. Institute for Informatics of Tatarstan Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia. 3. Kazan Physical and Technical Institute, Kazan, Russia

16.00

q1-04

Quantum addressing in photon echo based quantum random access memory . S.A. Moiseev ^1,2 , E.S. Moiseev² . 1. Kazan Physical-technical Institute of Russian Academy of Sciences, Kazan, Russia. 2. Kazan Federal University, Kazan, Russia .

14.40

O1-05

T heoretical study of terahertz plasma instability in asymmetric double-grating-gate transistor structures . A. Satou ¹ , H. Shida¹ , T. Otsuji¹, V.V. Popov² . 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Kotel'nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov, Russia .

1 5. 00

O1-06

Voltage-controlled surface plasmon-polaritons in double-graphene structures . D. Svintsov¹ , I. Semenikhin¹, V. Vyurkov¹, V. Ryzhii², T. Otsuji² . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan .

15.20

O1-07

Advanced impact ionization current model for MOS devices including heat effects . T. Krupkina, D. Rodionov . National Research University 'MIET' , Moscow, Russia .

15.40

O1-08

Electric instability in GaAs/Al_xGa_1-xAs superlattices with barrier layers non-transparent for tunneling. V. Gergel` <sup>1</sup> , G.Galiev<sup>1</sup>, E. Il`ichev², A. Verhovtseva¹, N. Gorshkova¹, A. Zelenyi¹, I. Altu ê hov¹, S. Paprotskiy¹ . 1. Kotel`nikov Institute of Radio Engineering, RAS, Moscow, Russia. 2. National Research University of Electronic Technology (MIET), Moscow, Russia .

16.00

O1-09

Ionization energy oscillations in metallic and semiconducting nanotubes of ultra small diameters. A. Ganin, E. Bormontov, L. Bitytskaya . Voronezh State University, Voronezh, Russia .

16. 20

O1-10

The brain is a nanoelectronic object. I.I. Abramov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus .

17 .00

O1-11

Boundary conditions for the contact between normal metal and multiband superconductors with unusual types of pairing . I. Devyatov, A. Burmistrova . Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.20

O1-12

New method for calculation of the electron transport in heterostructures with different unusual types of superconducting pairing . A. Burmistrova, I. Devyatov . Lomonosov Moscow State University, Skobeltsin Institute of Nuclear Physics, Moscow, Russia .

17.40

O1-13

Superconducting quantum arrays as electrically small antennas . I. Soloviev ¹ , N. Kolotinsky², N. Klenov², A. Sharafiev², V. Kornev², O. Mukhanov³ . 1. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 2. Physics Department, Moscow State University. 3. HYPRES, Inc., Elmsford, USA .

18.00

O1-14

Combined magnetic field sensor with superconductive magnetic field concentrator. L.P. Ichkitidze. National Research University of Electronic Technology "MIET", MIET, Zelenograd, Moscow, Russia .

18.20

O1-15

Comparative parameters of superconductor-based sensors of weak magnetic fields. L.P. Ichkitidze¹, M.L. Gavryushina². 1. National Research University of Electronic Technology "MIET", Zelenograd, Russia. 2. Bazovye Technologii JSC, Moscow, Russia .

17.00

q1-05

INVITED: Spatial structure of two-photon and thermal light. S.P. Kulik, S.S. Straupe, I. Bobrov. Faculty of Physics, Moscow M.V. Lomonosov State University, Moscow, Russia .

17.30

q1-06

Biphoton spectrum control . N. Borschevskaya¹, I. Dyakonov¹, K. Katamadze^1,2, S. Kulik¹, A. Paterova ¹ . 1. Moscow State University, Moscow, Russia, 2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia .

17.50

q1-07

Quantization effects observed in asymmetric rings. V.L. Gurtovoi, A.I. Ilin, A.V. Nikulov, V.A. Tulin . Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow District, Russia .

18.10

q1-08

Quantum communication with Bose-Einstein condensates . A.N. Pyrkov , T. Byrnes . National Institute of Informatics, Tokyo, Japan .

18.30

q1-09

Effect of image charges on a space qubit evolution, V. Vyurkov, M. Rudenko, S. Filippov. Institute of Physics and Technology, RAS, Moscow, Russia .

17.00

O1-16

A dynamic simulation model for functionally-integrated injection laser-modulator. B. Konoplev¹, E. Ryndin², M. Denisenko¹. 1. Taganrog Institute of Technology - Southern Federal University, Taganrog, Russia. 2. Souther Scientific Center of RAS, Rostov-na-Donu, Russia .

17.20

O1-17

Computationally efficient methods for optical simulation of solar cells and their applications. M. Zanuccoli¹, I. Semenikhin², V. Vyurkov², E. Sangiorgi¹, C. Fiegna¹. 1. ARCES-DEI University of Bologna & IUNET, Cesena (FC), Italy. 2. Institute of Physics and Technology, RAS, Moscow, Russia .

17.40

O1-18

Optical absorption of silicon layer with incorporated nano-voids and metal nanoparticles . V. Shautsova, P. Gaiduk . Belarusian State University, Minsk, Belarus.

18.00

O1-19

Simulation of resonant tunneling devices based on different materials . I.I. Abramov, N.V. Kolomejtseva, I.A. Romanova, A.G. Klimovich. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus.

18.20

O1-20

Electronic structure of magnetic nanoclusters of cobalt and nickel silicides. A. Tuchin ¹, L. Bityutskaya¹, A. Lazarev², A. Sigov³. 1. Voronezh State University, Voronezh, Russia. 2. "Rosbiokvant" Ltd.,Voronezh, Russia. 3. MIREA, Moscow, Russia .

09.00

L2-01

INVITED: Graphene-based infrared and terahertz detectors: Concepts, features, and comparison . V. Ryzhii ¹ , T. Otsuji¹, M. Ryzhii², V. Mitin³, M.S. Shur⁴ . ¹ Tohoku University, Sendai, Japan. ² University of Aizu, Aizu-Wakamatsu, Japan. ³ University at Buffalo, SUNY, Buffalo, USA, ⁴ Rensselaer Polytechnic Institute, Troy, USA .

09.40

L2-02

INVITED: Terahertz-wave generation using graphene - toward the creation of graphene injection lasers . T. Otsuji ¹ , A. Satou¹, S.A. Boubanga Tombet¹, M. Ryzhii², V. Ryzhii¹. 1. Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. 2. Computational Nano-Electronics Laboratory, University of Aizu, Japan .

10.20

L2-03

INVITED: Perspective applications for 3C-SiC on silicon technology. F. Iacopi, L. Wang, G. Walker, L. Hold, B. Cunning, J. Han, P. Tanner, A. Iacopi, S. Dimitrijev. Queensland Micro and Nanotechnology Facility, Griffith University, Australia .

11.20

O2-01

INVITED: Carbone nanotubes and nanostructures ? multifunctional materials for emission electronics. Yu.V. Gulyaev. Kotel'nikov Institute of Radio Engineering and Electronics, RAS, Russia.

11.50

O2-02

INVITED: Research activity in field of Projection XEUV Lithography in IPM RAS. N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures, RAS, Russia .

12.20

O2-03

Next Generation Lithography - fundamental problems . S.I. Zaitsev . IMT RAS, Chernogolovka, Russia .

12.40

O2-04

NANOMAKER - the electron lithography tool for ultimate resolution. B.N. Gaifullin¹, I.S. Stepanov¹, A.A. Svintsov², S.I. Zaitsev². 1. Interface Ltd, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS , Chernogolovka, Russia .

11.20

q2-01

Quantum information and spectroscopy of cold Rydberg atoms. I.I. Ryabtsev, I.I. Beterov, D.B. Tretyakov, V.M. Entin, E.A. Yakshina. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

11.40

q2-02

Creating a single-atom array for quantum computation using Rydberg blockade in an atomic ensemble. D.B. Tretyakov , I.I. Beterov, V.M. Entin, E.A. Yakshina, and I.I. Ryabtsev. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia .

12.00

q2-03

Integrated diamond nanostructures for quantum informatics. V . P . Popov ¹ , L . N . Safronov ¹ , V . A . Antonov ¹ , S . N . Podlesnyi ¹ , A . V . Shishaev ¹ , I . I . Ryabtsev ¹ , N . Kupriyanov ² , Yu . N . Pal ' yanov ² . 1. Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia. 2. Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia .

12.20

q2-04

Color centers in nanodiamonds of different origin. I.I. Vlasov¹ , V.G. Ralchenko¹, O. Shenderova², A.A. Shiryaev³, A.A. Khomich¹, V.S. Sedov¹, M.S. Komlenok¹, V.S. Pavelyev^4,5, K.N. Tukmakov⁵, S. Turner⁶, F. Jelezko ⁷, J. Wrachtrup⁸, V.I. Konov¹. ¹ General Physics Institute, RAS, Moscow, Russia. ² International Technology Centre, Raleigh, USA. ³ Institute of Physical Chemistry, RAS, Russia. ⁴Image Processing Systems Institute RAS, Samara, Russia. ⁵Samara State Aerospace University, Samara, Russia. ⁶ EMAT, University of Antwerp, Antwerpen, Belgium. ⁷Institute for Quantum Optics, Ulm University, Ulm, Germany. ⁸Physical Institute and Research Center SCOPE, Stuttart University, Stuttgart, Germany .

12.40

q2-05

Quantum register based on structured diamond waveguide with NV centers. A.V. Tsukanov, I.Yu. Kateev, A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Science, Moscow, Russia .

11.20

W2-01

INVITED: Random telegraph noise diagnostics of nanowire SOI MOSFETs. A.N. Nazarov¹, I. Ferain², R. Yu², A. Kranti², P. Razavi². 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, Cork, Ireland .

11.45

W2-02

INVITED: SOI structure with Si-nanoclusters embedded in the oxide layer prepared by low-dose co-implantation. V. Litovchenko, B. Romanyuk, V. Ìå lniê , O. Oberemok, V. Popov, A. Sarikov. V. Lashkarev Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine .

12.10

W2-03

Quantum noise in field-effect nanotransistors. V. Vyurkov, S. Filippov, I. Semenikhin, A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow, Russia .

12.30

W2-04

Revision of interface coupling in ultra-thin body SOI MOSFETs. T. Rudenko¹, A. Nazarov¹, V. Kilchytska², D. Flandre². 1. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

12.50

W2-05

Noise characteristics of nanoscaled SOI MOSFETs. N. Lukyanchikova¹, N. Garbar¹, V. Kudina¹, A. Smolanska¹, E. Simoen², C. Claeys^2,3 . 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. IMEC, Leuven, Belgium. 3. KU Leuven, Belgium .

14.00

W2-06

INVITED: Threshold voltage of advanced MOSFETs: Physical criteria and experimental extraction methods. T. Rudenko¹, A. Nazarov¹, V. Kilchytska², D. Flandre². 1. Institute of Semiconductor Physics, National Academy of Ukraine, Kyiv, Ukraine. 2. ICTEAM Institute, Universite catholique de Louvain .

14.30

W2-07

Electrical characterization of high-k gate dielectrics for future CMOS technology. Y.Y. Gomeniuk ¹ , Y.V. Gomeniuk¹, A.N. Nazarov¹, I.P. Tyagulskii¹, V.S. Lysenko¹, K. Cherkaoui ², S. Monaghan², P.K. Hurley². 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, Kiev, Ukraine. 2. Tyndall National Institute, University College Cork, Lee Maltings, Ireland .

1 4. 50

W2-08

The mobility models for TCAD simulation of extremely thin nanoscale SOI MOSFETs . Y. Chaplygin, A. Krasjukov, T. Krupkina, I. Titova . National Research University of Electronic Technology, Moscow, Russia .

15.10

W2-09

SOI CMOS RadHard SRAM 256K, 1M, and 4M . N. Alieva¹, A. Belous¹, V. Bondarenko², L. Dolgyi², E. Lozitskyi¹, S. Soroka ¹, G. Usov¹, A. Turzevich¹, S. Shvedov¹ . 1. "Integral" Join Stock Company, Minsk, Belarus. 2. Belarussian State University of Informatics and Radioelectronics, Minsk, Belarus .

15.30

W2-10

Carrier mobility in SOI layers with bonded interface. O.V. Naumova, B.I. Fomin, V.P. Popov . Institute of Semiconductor Physics, RAS, Novosibirsk, Russia .

14.00

q2-0 6

INVITED: Charge pumping with Coulomb blockade devices . Yu.A. Pashkin . Physics Department, Lancaster University, United Kingdom, NEC Smart Energy Research Laboratories and RIKEN Advanced Science Institute, Tsukuba, Japan .

14.30

q2-07

Quantum discord in Materials with electron and nuclear spins. M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

14.50

q2-08

On the time-optimal implementation of quantum Fourier transformation for qudits represented by quadrupole nucleus. V.P. Shauro, V.E. Zobov. L. V. Kirensky Institute of Physics, Siberian Branch of Russian Academy of Sciences, Krasnoyarsk, Russia .

15.10

q2-09

A spin chain under the pulse conditions as a quantum data channel. M.M. Kutcherov. Institute of Space and Information Technology, Siberian Federal University, Krasnoyarsk, Russia .

15.30

q2-1 0

A unitary invariant measure of quantum correlations. A.I. Zenchuk. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

15.50

q2-11

Quantum correlations in a nanopore filled with a gas of spin-carrying molecules (atoms) in a strong magnetic field. E.B. Fel'dman, E.I. Kuznetsova, M.A. Yurishchev. Institute of Problems of Chemical Physics, RAS, Chernogolovka, Russia .

14.00

O2-05

INVITED: On the thermodynamics of antiferromagnetic nanoparticles and macroscopic quantum effects observed by M o ssbauer spectroscopy. M.A. Chuev. Institute of Physics and Technology, RAS, Moscow , Russia .

14.30

O2-06

Characterization of nanoparticles in a media using multilevel models of magnetic dynamics . I. Mischenko ¹ , M. Chuev ¹ , V. Cherepanov ² , M. Polikarpov ² , V. Panchenko ² . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. National Research Centre "Kurchatov Institute", Moscow, Russia .

14.50

O2-07

The effect of technological factors on micromagnetic states of magnetic nanostructures . O.S. Trushin ¹ , V.V. Naumov¹, V.F. Bochkarev¹, N. Barabanova², V.A. Paporkov² . 1. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .

15.10

O2-08

Magnetoresistance of multilayer ferromagnetic nanoparticles . S.N. Vdovichev, B.A. Gribkov, S.A. Gusev, A.Yu. Klimov, V.L. Mironov, I.M. Nefedov, V.V. Rogov, A.A. Fraerman, I.A. Shereshevskii . Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.30

O2-09

Magnetic logical cells based on domain wall pinning effects in ferromagnetic nanowire-nanoparticles systems . V.L. Mironov , O.L. Ermolaeva, E.V.Skorohodov, A.Yu. Klimov . Institute for Physics of Microstructures, RAS, Nizhniy Novgorod, Russia .

15.50

O2-10

Field-induced transitions in ferrimagnetic chain of spins: stability of ferromagnetic and antiferromagnetic phases. M. Kostyuchenko. Yaroslavl State Technical University, Yaroslavl, Russia .

9 .00

O3-01

Current state and new prospects of semiconductor infrared photoelectronics . V. Ponomarenko^1,2, A. Filachev¹. 1. R&P Association "Orion", Moscow, Russia. 2. MIPT, Dolgoprudny, Russia .

9.20

O3-02

Silicon nanowire field effect transistor with highly doped leads . S. Amitonov ¹ , D. Presnov^1,2, K. Rudenko³, V. Rudakov³, V. Krupenin¹ . 1. Laboratory of Cryoelectronics, Moscow State University, Moscow, Russia. 2. Nuclear Physics Institute, Moscow State University, Moscow, Russia. 3. Institute of Physics and Technology, RAS, Moscow, Russia .

9.40

O3-03

Electronic band alignment and electron transport in Cr/BaTiO₃/Pt ferroelectric tunnel junctions . A. Zenkevich ¹ , M. Minnekaev ¹ , Yu. Matveyev ¹ , Yu. Lebedinskii ¹ , K. Bulakh ² , A. Chouprik ² , A. Baturin ² , S. Thiess ² , W. Drube ² . 1. National Research Nuclear University "Moscow Engineering Physics Institute", Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany .

1 0. 00

O3-04

A gold free fully copper metalized GaAs pHEMT for the high frequency applications. E. Erofeev ¹ , V. Kagadei¹, A. Kazimirov². 1. Research and Production Company "Micran", Tomsk, Russia. 2. Scientific Research Institute of Electrical Communication Systems, Tomsk, Russia .

09.00

O3-05

Measurement of thickness of a layer of natural silicon oxide being on a test relief pitch structure, created on a substrate of monocrystalline silicon. M.N. Filippov^a,b,c, V.P. Gavrilenko^a,c, A.A. Kuzin^a,c, A.Yu. Kuzin^c, A.A. Kuzmin^a,c, V.B. Mityukhlyaev^a, A.V. Rakov^a, P.A. Todua^a,c, A.V. Zablotskiy^a,c . ^a Center for Surface and Vacuum Research, Moscow, Russia; ^b N.S. Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; ^cNational Research University "Moscow Institute of Physics and Technology", Dolgoprudny, Moscow Region, Russia . /p>

09.20

O3-06

Characterization of graphene layers grown using Ni/a-SiC bi-layer as a precursor. A.V. Vasin¹, S.A. Gordienko¹, P.M. Lytvyn¹, V.V. Strelchuk¹, A.S. Nikolaenko ¹, A.N. Nazarov¹, A.V. Rusavsky¹, V.S. Lysenko¹, V. Popov². 1. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev, Ukraine. 2. Institute of Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS, Novosibirsk, Russia .

9.40

O3-07

Characterization of semiconductor heterostrucrures using Dynamic Secondary Ion Mass Spectrometry . B. Ber ^1,2 , A. Merkulov ³ . 1. A.F. Ioffe Physical-Technical Institute, RAS, St Petersburg, Russia; 2. Center of Multi-User Equipment "Material Science and Characterization for Advanced Technologies", St Petersburg, Russia. 3. CAMECA SAS, Gennevilliers, Cedex, France .

10.00

O3-08

Determination of the state of non-volatile memory cell with the floating gate by using scanning probe microscopy . D. Hanzii ¹ , E. Kelm ² , N. Luapunov ² , R. Milovanov ² , G. Molodcova ² , M. Yanul ¹ , D. Zubov ² . 1. NT-MDT, Zelenograd, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia .

10.20

O3-09

Mechanisms of image formation in SEM. Yu.V. Larionov, Yu.A. Novikov . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

10.40

O3-10

Virtual scanning electron microscope . Yu.V. Larionov , Yu.A. Novikov . A.M. Prokhorov General Physics Institute, RAS, Moscow, Russia .

09.00

O3-11

Formation mechanism and properties of Ge quasicrystalline nanoclusters in SiO_x matrix. Yu.N. Kozyrev¹, M.Yu. Rubezhanska¹, V.S. Lysenko², S.V. Kondratenko³, V.P. Kladko², Yu.V. Gomeniuk², Ye.Ye. Melnichuk³. 1. O.O. Chuiko Institute of Surface Chemistry, Kyiv, Ukraine. 2. Institute of Semiconductor Physics, Kyiv, Ukraine. 3. Taras Shevchenko national University of Kyiv, Ukraine.

09.20

O3-12

Photoluminescence of Si layers on grown SiO₂ and optical resonant structures . A.A. Shklyaev ^{1, 2} , D.V. Gulyaev¹, D.E. Utkin¹, A.V. Tsarev¹, A.V. Dvurechenskii¹, A.V.Latyshev^{1, 2} . 1. A .V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia. 2. Novosibirsk State University, Novosibirsk, Russia .

9.40

O3-13

Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In_0.7Al _0.3As/In_0.7Ga_0.3As/In_0.7Al_0.3As/GaAs. S.S. Pushkarev^1,2, G.B. Galiev¹, E.A. Klimov¹, D.V. Lavrukhin¹, I.S. Vasil'evskii ², R.M. Imamov³, I.A. Subbotin³, O.M. Zhigalina³, V.G. Zhigalina³, P.A. Buffat⁴, B. Dwir⁴, Å .I. Suvorova ^3,4 . 1. Institute of Ultrahigh Frequency Semiconductor Electronics, RAS, Moscow, Russia. 2. National Nuclear Research University "MEPHI", Moscow, Russia. 3. A.V. Shubnikov Institute of Crystallography of RAS, Moscow, Russia. 4. Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland .

10.00

O3-14

GaN layers with low dislocation density and high electron mobility grown by high-temperature ammonia-MBE . S.I. Petrov¹, A.N. Alexeev¹, D.M. Krasovitsky², V.P. Chaly², V.V. Mamaev¹ . 1. SemiTEq JSC, Saint-Petersburg, Russia. 2. Svetlana-Rost JSC, Saint-Petersburg, Russia .

10.20

O3-15

Formation, optical, electrical, and thermoelectrical properties of silicon nanocomposites with embedded Mg₂Si nanocrystallites . K.N. Galkin¹, S.V. Vavanova¹, N.G. Galkin¹, R. Kudrawiec², E. Zielony², A. Misiewicz² . 1. Institute of Automation and Control Processes, Far Eastern Branch of RAS, Vladovostok, Russia. 2. Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland .

10.40

O3-16

Laser pulse crystallization and optical properties of Si/SiO₂ and Si/Si₃N₄ multilayer nano-heterostructures . V . A . Volodin ¹ , S .A. Arzhannikova¹ , A.A. Gismatulin ¹ , G.N. Kamaev¹, A.H. Antonenko¹, S.G. Cherkova¹, S.A. Kochubei¹, A.A. Popov², H. Rinnert³, and M. Vergnat³ . 1. Institute of Semiconductor Physics, RAS; Novosibirsk State University, Novosibirsk, Russia. 2. Yaroslavl Department of FTI RAS, Yaroslavl, Russia. 3. Institut Jean Lamour UMR CNRS - Nancy Universite - UPV Metz, Faculte des Sciences et Technologies, Vand?uvre-les-Nancy Cedex, France .

11.20

O3-17

INVITED: Fundamentals and applications of Plasma ALD in nanoelectronics . Ch. Hodson. Oxford Instruments Plasma Technology, UK.

11.50

O3-18

INVITED: Applications of Plasma Immersion Ion Implantation for advanced micro/nano electronics: Challenges and case samples using IBS PULSION ^R Tool . F. Torregrosa ¹ , J. Duchaine¹, S. Spiegel¹, G. Borvon¹, F. Milesi², K. Hassouni³, K. Maury ³ . 1. IBS, ZI Peynier Rousset, Peynier, France. 2. CEA-Leti MINATEC Campus, Grenoble Cedex 9, France. 3. Laboratoire des Sciences des Procedes et des Materiaux, LSPM, CNRS-UPR3407 Universite Paris 13, Villetaneuse, France .

12. 20

O3-19

Comparative investigation of ultra-shallow boron implantation into bulk silicon and SOI structures by PIII technique . A. Miakonkikh ¹ , K. Rudenko¹, V. Rudakov², A. Orlikovsky¹ . 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Yaroslavl Branch of Institute of Physics and Technology, RAS, Yaroslavl, Russia .

12.40

O3-20

Etching characteristics of GaAs in CCl₂F₂/Ar inductively coupled plasma . D.B. Murin, V.I. Svettsov, A.M. Efremov, A.E. Leventsov . Ivanovo State University of Chemical Technology, Ivanovo, Russia .

13.00

O3-21

The effects of additive gases (Ar, N₂, H₂, Cl₂, O₂) on HCl plasma parameters and composition. A. Efremov, A. Yudina, A. Davlyatshina, V. Svettsov . Ivanovo State University of Chemistry and Technology, Ivanovo, Russia .

11.20

q3-01

INVITED: Entanglement in a system of harmonic oscillators . Yu. Ozhigov . Moscow State University; Institute of Physics and Technology RAS, Moscow, Russia .

11.50

q3-02

The strong influence of weak observers on the electron dynamics in large coupled quantum dots clusters . L. Fedichkin ^1,2,3 . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Russia. 3. NIX, Moscow, Russia .

12.10

q3-03

Analysis of quantum processes: methods and results . A.Yu. Chernyavskiy ^1,2 . 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia. 2. Moscow State University, Moscow, Russia .

12.30

q3-04

Entanglement-annihilating quantum dynamical processes . S.N. Filippov ^1,2 . 1. Institute of Physics and Technology of the Russian Academy of Sciences, Moscow, Russia. 2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Russia .

12.50

q3-05

Euclidean qubits versus conventional quantum circuits . A.Yu. Vlasov ^1,2 . 1. Federal Radiology Center, IRH, St.-Petersburg, Russia. 2. A. Friedmann Laboratory for Theoretical Physics, St.-Petersburg, Russia .

11.20

O3-22

The conductive layers on the base of multiwalled carbon nanotubes . L.P. Ichkitidze ¹ , B.M. Putrya¹, S.V. Selishchev¹, E.V. Blagov², A.A. Pavlov², V.A. Galperin³ , E.P. Kitsyuk³, Yu.P. Shaman³. 1. National Research University of Electronic Technology "MIET" , MIET, Zelenograd, Moscow, Russia. 2. Institute of Nanotechnology of Microelectronics, RAS, Moscow, Russia. 3. Scientific-Manufacturing Complex "Technological Centre", MIET, Zelenograd, Moscow, Russia.

11.40

O3-23

Investigation of nucleation and field emission characteristics of carbon nanowalls grown on porous silicon . S. Evlashin,Y. Mankelevich, A. Pilevskii, V. Borisov, P. Shevnin, A. Stepanov, N. Suetin, A. Rakhimov . Skobeltsyn Institute of Nuclear Physics, Moscow, Russia .

12.00

O3-24

Properties of thin HfO₂ gate dielectric formed by plasma ALD process . A. Miakonkikh , A. Rogozhin, K. Rudenko, A. Orlikovsky . Institute of Physics and Technology, RAS, Moscow, Russia .

12.20

O3-25

Effect of nanodimensional polyethylenimine layer on surface potential barriers of hybrid structures based on silicon single crystal . I.V. Malyar, D.A. Gorin, S.V. Stetsyura. Saratov State University, Saratov, Russia .

12.40

O3-26

Possible influence of nanoobjects on properties of nanomaterials. S.P. Timoshenkov, I.M. Britkov, O.M. Britkov, S. Evstafiev, A.S. Timoshenkov, B.M. Simonov, E.P. Prokopev. Federal State Budgetary Institution of Higher Education "National Research University "MIET", Zelenograd, Russia .

14.00

O3-27

INVITED: The physical and technological problems in design of pressure sensors with nano-scale piezoresistors. I. Neizvestnyi¹, G. Kamaev¹, V. Gridchin², A. Cherkaev². ¹ A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia; ²Novosibirsk State Technical University, Novosibirsk, Russia.

14.30

O3-28

Design and fabrication of piezoelectric MEMS. S. Timoshenkov, V. Vodopyanov, N. Korobova. National Research University of Electronic Technology, Department of Microelectronics, Zelenograd, Moscow, Russia .

14.50

O3-29

New electronic system converter linear acceleration with custom output characteristics . S. Timoshenkov , A. Timoshenkov, A. Shalimov . National Research University of Electronic Technology, Microelectronics Dept., Zelenograd, Moscow, Russia .

15.10

O3-30

Resonance properties of multilayer metallic nanocantilevers . I. Uvarov, V. Naumov, I. Amirov. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl, Russia.

15.30

O3-31

Modeling of two-axis micromechanical gyroscope-accelerometer. I.E. Lysenko. Taganrog Institute of Technology - Southern Federal University, Taganrog, Russia .

1 5. 50

O3-32

Matrix propulsion microthruster for nanosatelites . V. Bondarenko ¹ , K. Dobrego², L. Dolgyi¹, A. Klushko¹, E.Chubenko¹, S. Futko² . 1. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. 2. A.V. Luikov Heat and Mass Transfer Institute, National Academy of Sciences of Belarus,Minsk, Belarus .

14.00

q3-06

On the validity of neoclassical theory of the Compton effect for revision and reformulation of the standard quantum mechanics interpretation. V.V. Aristov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia .

14.20

q3-07

Why quantum computing can be real only in multiple universes . V.V. Aristov, A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia .

14.40

q3-08

Simulations of adiabatic and nonadiabatic chemical reactions in condensed media. K. Arakelov. Moscow State University, Moscow, Russia .

15.00

q3-09

Quantum implication and strategies for multi-agent models . A.A Ezhov, A.G. Khromov, S.S. Terentyeva . Science Research Center of Russian Federation Troitsk Institute for Innovation and Fusion Research, city district Troitsk, Moscow, Russia .

14.00

O3-33

INVITED: Formation of Nanoscale Structures by Inductively Coupled Plasma Etching . C. Welch. Oxford Instruments Plasma Technology, UK.

14.3 0

O3-34

Plasma etching of silicon for MEMS and optical applications: Comparison of RIE, Bosch and cryogenic processes . I. Amirov¹, V. Lukichev¹, V. Yunkin². 1. Institute of Physics and Technology, RAS, Moscow, Russia. 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Russia .

14.5 0

O3-35

Low-temperature synthesis of carbon nanotubes by plasma enhanced chemical vapor deposition. V.A. Galperin, A.A. Pavlov, Yu.P. Shaman, A.A. Shamanaev, S.N. Skorik . Scientific-Manufacturing Complex "Technological Centre", Moscow, Russia .

15.1 0

O3-36

Photovoltaic properties of porous-Si:He/Si structure produced by plasma immersion ion implantation . A. Rogozhin , A. Miakonkikh, K. Rudenko . Institute of Physics and Technology, RAS, Moscow, Russia .

15.3 0

O3-37

On a way to fabrication technology of u ltra thin Si on sapphire. V. Chernysh ¹ , A. Shemukhin², Yu. Balakshin¹, N. Egorov³, V. Goncharov³, S. Golubkov³, A. Sidorov³, B. Malukov³, V. Statsenko⁴, V. Chumak⁴ . 1. Faculty of Physics, Moscow State University, Moscow, Russia. 2. Institute of Nuclear Physics, Moscow State University, Moscow, Russia. 3. Research Institute of Material Science and Technology, Zelenograd, Russia. 4. Epiel Joint Stock Company , Zelenograd, Russia .

1 5.50

O3-38

Nonlinear waves and structures induced by ion bombardment of solids . S. Krivelevich¹, D. Korshunova², N. Pron² . 1. Yaroslavl Branch of the Institute of Physics and Technology , RAS, Yaroslavl, Russia. 2. Yaroslavl State University, Yaroslavl, Russia .