Chair: E. Velikhov, Russian Scientific Center “Kurchatov Institute”, Moscow, Russia
Co-chair: A. Orlikovsky, Institute of Physics and Technology (IPT), Russian Academy of Sciences (RAS), Moscow, Russia
Members:
A. Aseev, Institute of Semiconductor Physics, Siberian Branch of the RAS, Novosibirsk, Russia
D. Averin, Stony Brook University, New York, USA
M. Baklanov, International Microelectronic Center (IMEC), Leuven, Belgium.
V. Benine, ASML, Veldhoven, Netherlands
R. Chabicovsky, Technical University, Vienna, Austria
Yu. Gulyaev, Institute of Radioelectronics, RAS, Moscow, Russia
H.-L. Hwang, National Tsing Hua University, Hsinchu, Taiwan
F. Kuznetsov, Institute of Inorganic Chemistry, Siberian Branch of the RAS, Novosibirsk, Russia
V. Labunov, Belorussian State University of Informatics and Radioelectronics, Minsk, Belorussia
K. Likharev, Stony Brook University, New York, USA
V. Litovchenko, Institute of Semiconductor Physics of National Ukrainian Academy of Sciences, Kiev, Ukraine
J. Nishizawa, Semiconductor Research Institute, Sendai, Japan
K. Novoselov, University of Manchester, Manchester, UK
Yu. Pozhela, Institute of Semiconductor Physics, Vilnyus, Lithuania
I. Rangelow, University of Ilmenau, Ilmenau, Germany
H. Ryssel, Fraunhofer Institute of Integrated Systems and Devices Technology, Erlangen, Germany
Th. Skotnicki, ST Microelectronics, Crolles, France
R. Suris, Ioffe Physical Technical Institute, RAS, St. Peterburg, Russia
D. Toma. Tokyo Electron Corporation, U.S. Technology Development Center, Albany, USA
A. Toriumi, University of Tokyo, Tokyo, Japan

Program Committee

Chair: A. Orlikovsky, Institute of Physics and Technology (IPT), Russian Academy of Sciences (RAS), Moscow, Russia
Co-chair: I. Neizvestnyi, Institute of Semiconductor Physics, Siberian Branch of the RAS, Novosibirsk, Russia
Co-chair: V. Lukichev, Institute of Physics and Technology, RAS, Moscow, Russia
Members:
A. Alexandrov, Lomonosov Moscow State University, Moscow, Russia
V. Aristov, Institute of Microelectronics Technology and High-Pure Materials, RAS, Chernogolovka, Russia
V. Betelin, Scientific Institute of System Research, RAS, Moscow, Russia
Yu. Bogdanov, Institute of Physics and Technology, RAS, Moscow, Russia
Yu. Chaplygin, Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
B. Gribov, State Scientific Institute of Ultra-Pure Materials, Zelenograd, Russia
F. Komarov, Belorussian State University, Minsk, Belorussia
Yu. Kopaev, P.N. Lebedev Physical Institute, RAS, Moscow, Russia
P. Kop’ev, Ioffe Physical Technical Institute, RAS, St. Peterburg, Russia
G. Krasnikov, JSC NIIME, Zelenograd, Russia
P. Maltsev, UHF Semiconductor Microelectronics Institute, RAS, Moscow, Russia
A. Nazarov, Institute of Semiconductor Physics of National Ukrainian Academy of Sciences, Kiev, Ukraine
Yu. Ozhigov, Lomonosov Moscow State University, Moscow, Russia
V. Panchenko, Institute of Laser and Informatics Technologies Problems, RAS, Shatura, Russia
A. Rudy, Yaroslavl Demidov State University, Yaroslavl, Russia
N. Salaschenko, Institute of Microstructures Physics, RAS, Nizhnii Novgorod, Russia
K. Salikhov, Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
A. Sigov, Moscow State Institute of Radioengineering, Electronics, and Automation (TU), Moscow, Russia
P. Todua, Moscow Institute of Physics and Technology (TU), Moscow, Russia
V. V’yurkov, Institute of Physics and Technology, RAS, Moscow, Russia

Organizing Committee

Chair: V. Lukichev, Institute of Physics and Technology, RAS, Moscow, Russia
Co-chair: K. Rudenko, Institute of Physics and Technology, RAS, Moscow, Russia
Members:
I. Abramov, Belorussian State University of Informatics and Radioelectronics, Minsk, Belorussia
I. Amirov, Yaroslavl Branch of the IPT RAS, Yaroslavl, Russia
Yu. Bogdanov, Institute of Physics and Technology, RAS, Moscow, Russia
A. Buharaev, Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
M. Chuev, Institute of Physics and Technology, RAS, Moscow, Russia
A. Gorbazevitch, P.N. Lebedev Physical Institute, RAS, Moscow, Russia
M. Korolev, Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
S. Nikitov, Institute of Radioelectronics, RAS, Moscow, Russia
O. Pchelyakov, Institute of Semiconductor Physics, Siberian Branch of the RAS, Novosibirsk, Russia
V. Rubaev, President of the NIX Company, Moscow, Russia

Local Organizing Committee

CM of the RAS, Prof. Vladimir Lukichev – Chair of the ICMNE-2012 Organizing Committee
Prof. Yury Bogdanov - Chair of the Extended Session QI-2012
Dr. Vladimir V’yurkov - Chair of the Workshop SOI-2012
Dr. Vladimir Kudrya - Scientific Secretary of ICMNE-2012
Mr. Sergey Skalkin – Financial Administrator of ICMNE-2012

Dr. Andrey Miakonkikh
Dr. Alexander Rogozhin
Dr. Igor Semenikhin
Dr. Alexander Tsukanov
Dipl. Eng. Irina Lukianova
Dipl. Eng. Valeriya Sosina

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