October 3th. 2007

Poster session I
Entresol

Sub-100 nm Lithography

P1 - 01

A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties. N. Chkhalo, I.  Dorofeyev, N. Salashchenko, M. Toropov . Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia

P1 - 02

A new source of a reference spherical wave for a point diffraction interferometer. N. Chkhalo, A. Klimov, D. Raskin, V. Rogov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia

P1 - 03

Correction of the EUV mirror substrate shape by ion beam. N. Chkhalo, L. Paramonov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia

P1 - 04

Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithograther. N. Chkhalo, I. Zabrodin, I.  Kas'kov, E. Kluenkov, A. Pestov, N. Salashchenko. Institute for Physics of Microstructures RAS, Nyzhny Novgorod , Russia

P1 - 05

Well-ordered nanostructures fabricated using nanosphere lithography. A.A. Grunin, V.V. Moskalenko, I.V. Soboleva, A.A. Ezhov and A.A. Fedyanin. Faculty of Physics, M.V.Lomonosov Moscow State University , Moscow , Russia

P1 - 06

Mask Image Formation by Electron Beam Deposition from Vapour Phase. M.A. Bruk 1 , E.N. Zhikharev 2 , S.L. Shevchuk 2 , I.A. Volegova 1 , A.V. Spirin 1 , E.N. Teleshov 1 , V.A. Kalnov 2 , Yu.P. Maishev 2 . 1. Karpov Institute of Physical Chemistry, Moscow , Russia . 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia

Nanodevices and Nanostructures

P1 - 07

Electron Transition Along а n Atomic Chain. K.K. Satarin, I.K. Gainullin, I.F. Urazgildin. M.V. Lomonosov Moscow State University , Department of Physics, Moscow , Russia

P1 - 08

One-Dimentional Heterojunctions with Oriented Carbon Layers. N.D. Novikov, M.B. Guseva, V.G. Babaev, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia

P1 - 09

Ultrafast particle probability transfer in quantum chains. A.A. Gorbatsevich, M.A. Panteleev . Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia

P1 - 10

Correlation mechanism of negative differential resistance in molecular wire. Yu. B. Kudasov. Russian Federal Nuclear Center – VNIIEF, Sarov, Nizhni Novgorod region, Russia

P1 - 11

Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells. V.A. Petrov PP PP , A.V. Nikitin. Institute of Radio Engineering and Electronics, RAS, Moscow , Russia

P1 - 12

Macroscopic quantum oscillator in a two-dimensional conductor. I. Zhilyaev. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka, Moscow Region , Russia

P1 - 13

The Bohr's quantization in nanostructures. A.V. Nikulov. Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District , Russia

P1 - 14

Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells. V. Mordvintsev, S. Kudryavtsev V. Levin, L. Tsvetkova. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia

P1 - 15

Intersubband optical transitions in InAs/GaSb broken-gap quantum wells. I. Semenikhin 1 , A. Zakharova 1 , K. Nilsson 2 , K. A. Chao 2 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia 2 .  Department of Physics, Lund University , Sweden

P1 - 16

Plasma oscillations in two-dimensional electron-hole systems. S.A.  Moskalenko 1 , M.A. Liberman 2 , E.V. Dumanov 1 , A.G. Stefan 1 and M.I. Shmiglyuk 1 . 1. Institute of Applied Physics of the Academy of Sciences of Moldova , Chisinau, Republic of Moldova 2. Departmant of Physics, Uppsala University , Uppsala , Sweden

P1 - 17

On the melting and crystallization of n -dimensional nanostructures. M. N. Magomedov. Institute for Geothermal Problems, Daghestan Scientific Center of the Russian Academy of Sciences , Makhachkala , Russia

Photonics and Optoelectronics

P1 - 18

Two-dimentional photonic crystals for creating Mach-Zehnder micro-interferometers. A.V. Chetvertukhin 1 , A.A. Ezhov 1 , A.V. Shobukhov 2 , E.D. Mishina 3 , A.A. Zaitsev 3 , A.S. Sigov 3 , A.A. Fedyanin 1 . 1.Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2.Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 3.Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia

P1 - 19

Optical properties of subwavelength metal nanostructures. E. Virchenko, A. Zaitsev, V. Valdner. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia

P1 - 20

Plasmonic Chiral Nanostructures with Extraordinary Optical Transmission. M.R. Shcherbakov 1 , P.P. Vabishchevich 1 , A.A. Zaitsev 2 , A.S. Sigov 2 , V.O. Valdner 2 , A.A. Fedyanin 1 . 1. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia . 2. Moscow Institute of Radioengineering, Electronics and Automation, Moscow , Russia

P1 - 21

Surface electromagnetic waves in one-dimensional photonic crystals. E.M. Murchikova , M.D. Khokhlova, I.V. Soboleva and A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow

P1 - 22

Symmetric Difference Scheme for Two-Dimensional Photonic Crystal Modeling. A.V. Shobukhov 1 , A.A. Fedyanin 2 . 1.  Faculty of Comp. Math. & Cyber., Lomonosov Moscow State University , Moscow , Russia . 2. Faculty of Physics, Lomonosov Moscow State University , Moscow , Russia

P1 - 23

Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO 3 crystals. L.S.Kokhanchik , D.V.Punegov. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Siences , Chernogolovka , Russia

P1 - 24

Single Photon Current Impulses Statistics of the Small Square Silicon Avalanche Photodiodes in Geiger's Mode. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel' 1 , N.M. Gorshkova 1 , V.M. Gontar` 2 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow , Russia.2. LCC “Unique IC`s”, Moscow Russia

P1 - 25

Silicon avalanche photodiodes for particle detection. I.B. Chistokhin 1 , O.P. Pchelyakov 1 , E.G. Tishkovsky 1 , V.I. Obodnikov 1 , V.V. Maksimov 2 , A.A. Ivanov 2 , E. Gramch 3 . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia . 2. Budker Institute of Nuclear Physics, Russian Academy of Sciences, Novosibirsk , Russi . 3. Dept. Fisica, Universidad de Santiago, Santiago, Chile

P1 - 26

Electro-optical optimization of p-contact to raise efficiency of light -emitting diodes. S. Shapoval, M.Yu. Barabanenkov, V. Sirotkin, L. Saptsova, A. Kovalchuk, V. Zemlyakov * , N. Antonova * , A. Tsasulnikov † , W. Lundin † , E. Zavarin † , A. Sakharov † , V. Ustinov † . Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . * R&D Corporation "Istok", Fryazino, Moscow region, Russia . † Ioffe Physico-Technical Institute RAS, St. Petersburg , Russia

Devices and ICs

P1 - 27

Radiation Induced Leakage Due to Stochastic Charge Trapping in Isolation Layers of Nanoscale MOSFETs. G.I. Zebrev, M. S. Gorbunov, V.  S. Pershenkov . Department of Microelectronics, Moscow Engineering Physics Institute, Russia

P1 - 28

Role of Parasitic Bipolar Effect in Modern Partially Depleted SOI CMOS Technologies. V.E. Shunkov 1 , M.S. Gorbunov 1 , G.I. Zebrev 1 , B.V. Vasilegin 2 . 1.   Department of Microelectronics, Moscow Engineering Physics Institute, Russia 2. Science Research Institute for System Study, Russian Academy of Science , Moscow , Russia

P1 - 29

Accelerator Based Facility for Characterization of Single Event Upsets (SEU) and Latchups (SEL) in Digital Electronic Components. V.S. Anashin 1 , V.V. Emelyanov 2 , G.I. Zebrev 3 , I.O. Ishutin 1,3 , N.V. Kuznetsov 4 , B.Yu. Sharkov 5 , Yu.A. Titarenko 5 , V.F. Batyaev 5 , S.P. Borovlev 5 1. SpaceDevice Engineeing Institute, Federal Space Agency, Moscow , Russia . 2. Research Institute of Scientific Instruments, Lytkarino , Russia . 3. Department of Microelectronics, Moscow Engneering Physics Institute, Russia . 4.  Institute of Nuclear Physics , Moscow State University , Russia . 5. Institute of Theoretical and Experimental Physics, Moscow , Russia

P1 - 30

5W/mm Gallium Nitride Power HEMT. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia

P1 - 31

Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor. R.D. Tikhonov 1 , S.A.  Polomoshnov 1 , A.V. Kozlov 2 , A.Ju. Krasukov 2 . 1. SMC "Technological Centre" MIEE, Moscow , Zelenograd , Russia . 2. MIET, Moscow , Russia

P1 - 32

The analysis of mismatch of physical and technical parameters of semiconductor devices. N. Zaitsev 1 , Y. Brukhova 1 . 1. Moscow Institute of Electronic Technology, Technical University , Moscow , Russia

P1 - 33

High Efficiency Carbon Fiber Cold Cathode . Babaev V.G., Khvostov V.V., Guseva M.B., Savchenko N.F., Belokoneva Yu.G. Department of Physics, Moscow State University , Moscow , Russia

P1 - 34

Multicathode vacuum nanotriode as possible switch for integrated circuits of vacuum nanoelectronics. V.A. Zhukov . Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia

P1 - 35

Portable fuel cells with micro channel silicon application. V.V. Grinko, N.V. Lapin, A.F. Vyatkin. Institute of Microelectronics Technology RAS, Chernogolovka, Moscow District , Russia

P1 - 36

Technology covering solder past with high resolution. Soldering defects. Timoshenkov S.P., Antonov М.А., Seregin А.V. Institute of Electronic Technology, Moscow , Russia

Thin Films and Nanostructure Technologies I

P1 - 37

Molecular-beam epitaxy of ultrathin Si films on sapphire. Pavlov D.A., Shilyaev P.A., Korotkov E.V., Treushnikov M.V. University of Nizhny Novgorod, Nizhny Novgorod, Russia

P1 - 38

Research and development of technological processes of silicon on insulator structures manufacturing. V. Kalugin, S. Timoshenkov, Yu. Chaplygin. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia

P1 - 39

Laser Plasma Deposition of thin ZnO films, doped by nitrogen. O.A. Novodvorsky 1 , V.Ya. Panchenko 1 , O.D. Khramova 1 , L.S. Gorbatenko 1 , Ye.A. Cherebilo 1 , G.A. Batishev 1 , C. Wenzel 2 , J.W. Bartha 2 , H. Hiemann 2 , V.T. Bublik 3 , K.D. Chtcherbatchev 3 . 1 Institute on Laser and Information Technologies, Russian Academy of Sciences , Shatura, Moscow Region , Russia . 2 Institute of Semiconductor and Microsystems Technology, University of Technology , Dresden , Germany . 3 Moscow State Institute of Steel and Alloys (TU), Moscow , Russia

P1 - 40

TEM Study of BST Thin Films. O. Zhigalina 1 , K. Vorotilov 2 , A. Sigov 2 , I.  Androsov 2 . 1.   Institute of Crystallography , RAS, Moscow , Russia . 2. State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia

P1 - 41

Films with Regulated Optical and Electrophysical Parameters. A. Akinin 1 ,V. Chernokogin 1 ,Y. Kontsevoy 1 , E. Mitrofanov 2 , V. Pheophilaktov 1 , S. Simakin 2 . 1. Federal State Unitary Enterprise ‘SPE ‘Pulsar', Moscow , Russia . 2.  Federal State Unitary Enterprise 'Scientific Research Institute of Vacuum Technique named after S.A.Vekshinsky', Moscow , Russia

P1 - 42

Technology of Multilayer Metallic Thin Films Formation by Electrochemical Deposition Method . E.Yu. Buchin, E.V. Vaganova, A.V. Prokaznikov . Institute of Physics & Technology RAS, Yaroslavl Branch, Yaroslavl , Russia

P1 - 43

Studying of the structure of chemical bonds of matrix diamond-like silicon-carbon nanocomposites. A.M. Dodonov, E.A. Skryleva, I.V. Gontar, M.D. Malinkovich, Y.N. Parkhomenko, M.L. Shupegin, A.P. Smirnov. Moscow Institute of Steel and Alloys (Technological university), Moscow , Russia

P1 - 44

T he method of thin metal films adhesion increasing for the lowered dimensions structures. N.L. Kazansky 1 , V.A. Kolpakov 2 , V.D. Paranin 2 , M.S. Polikarpov 2 . 1.  Image Processing Systems Institute, Russian Academy of Science, Samara , Russia . 2. Samara State Aerospace University named after S.P. Korolyov, Samara, Russia

P1 - 45

Influence of vacancy clusters on the adhesion properties of interfaces. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Russia 2. Institute of Physics and Technology, RAS, Russia

P1 - 46

Influence of nanoobjects ( porous and inclusions ) on properties of interfaces of the bonding silicon wafers used for manufacturing of multilayered structures and mems. 1 Timoshenkov S.P., 1 Britkov O.M., 2 Grafutin V.I., 2 Funtikov Yu.V., 1 Kalugin V.V., 1,2 Svetlov-Prokop'ev E.P., 1 Zaluzhnyi A.G. 1 Moscow Institute of Electronic Technology (Technical University), Zelenograd, Moscow, Russia. 2 «State Science Centre of the Russian Federation - A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia

Superconducting Structures

P1 - 47

Epitaxial growth of YBCO thin films with unusual orientation. P.B. Mozhaev 1 , J.E. Mozhaeva 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.M. Kotelyanskii 3 , V.A. Lusanov 3 . 1.  Institute of Physics and Technology, RAS, Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3.  Institute of Radio Engineering and Electronics, RAS, Moscow , Russia

P1 - 48

About possibility of use of tunnel junctions as sensors of current states of mesoscopic superconducting structure. I. Zhilyaev. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow Region , Russia

P1 - 49

Consistent microscopic theory for kinetic – inductance detectors. A.Semenov 1 , I. Devyatov 2 . 1. Moscow Pedagogical State University , Moscow , Russia . 2. Lomonosov Moscow State University, Skobelitsyn Institute of Nuclear Physics, Moscow , Russia

P1 - 50

Single Flux Quantum Pulse Amplifier. V. K. Kornev 1 , I.   I.  Soloviev 1 , N. V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA

Defects and Impurities in Semiconductors

P1 - 51

SIMS application for manganese clusters detection in silicon. A. Trifonov, V. Saraykin. Scientific Research Institute of Physical Problems named after F.V.Lukin, Moscow , Russia

P1 - 52

An application of gold diffusion for defect structure characterization in silicon. O.V. Feklisova, E.B. Yakimov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia

P1 - 53

The electric field stratification in silicon doped by transition metal. V.V. Privezentsev. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia

October 4th. 2007

Poster session II
Entresol

Defects and Impurities in Semiconductors

P2 - 01

Low voltage ultra compact focused ion beam (FIB) column for resolution of 1.5?2 nm. Numerical simulation and prospects. V.A. Zhukov 1 , A.I. Titov 2 . 1.   Institute for Informatics and Automation, Russian Academy of Sciences , St. Petersburg , Russia . 2.  St. Petersburg State Technical University , St. Petersburg , Russia

P2 - 02

PRIVET – Simulator Single Event Upset Rate in Digital Memory Cells Induced by Heavy Ions of Space Environments. G.I. Zebrev 1 , I.  Ishutin 2 , V.S. Anashin 2 . 1. Department of Microelectronics, Moscow Engineering Physics Institute, Russia . 2. Space Device Engineering Institute (NIIKP), Federal Space Agency, Moscow , Russia

P2 - 03

Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs. O. Zhevnyak, V. Borzdov, A. Borzdov, D. Pozdnyakov, F.F. Komarov. Belarus State University , Minsk , Belarus

P2 - 04

Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation. O. Zhevnyak. Belarus State University , Minsk , Belarus

P2 - 05

The numerical modeling and the area optimization of the power DMOSFET. E. Artamonova, A. Balashov, A. Kluchnikov, A. Krasukov, A. Shvetz. Moscow Institute of Electronic Engineering, Moscow , Russia

P2 - 06

Analytical models of field effect transistors with thin channel. A. Khomyakov 1,2 and V. Vyurkov 2 . 1.  Moscow State Institute of Radio Engineering, Electronics and Automatics ( Technical University ), Moscow , Russia . 2.  Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia

P2 - 07

Modeling of Powerful GaAs MESFET. A. Shestakov, A. Myasnikov, K. Zhuravlev. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia

P2 - 08

Modeling of Vertical Transistor with Electrically Variable Junctions in ISE TCAD. D.G. Drozdov 2 , I.A. Horin 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 . 1. Institute of Physics and Technology of RAS, Moscow , Russia . 2. Moscow State Institute of Radioengineering, Electronics and Automation (TU), Moscow , Russia . 3. Federal State Unitary Enterprise "SPE Pulsar", Moscow , Russia

P2 - 09

Nanoscale surface topography dynamics during ion beam sputtering. A. Rudy, S. Kaschenko. Yaroslavl State University , Yaroslavl , Russia

P2 - 10

A new model for the copper CMP kinetics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 3 . 1. Institute for Problems in Mechanics, Russian Academy of Sciences , Russia . 2.  Institute of Physics and Technology, Russian Academy of Sciences , Russia

P2 - 11

Calculation of fast electrons distribution function in diamond film. A. Kozlitin, V. Zheleznov. F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia

P2 - 12

Influence of a spin environment on ESR spectra of a two-spin system. V.V. Privezentsev. Institute of Physics &Technology, RAS, Moscow , Russia

Magnetic Micro- and Nanostructures

P2 - 13

P2 - 14

Magnetic force microscopy investigations of multilayer submicron ferromagnetic particles. A.A. Fraerman, B.A. Gribkov , S.A. Gusev, A.Yu. Klimov, V.L. Mironov, V.V. Rogov, S.N. Vdovichev. Institute for Physics of Microstructures RAS, Nizhny Novgorod , Russia

P2 - 15

Epitaxial Fe films and nanostructures for magnetoelectronics. I.V. Malikov, L.A.  Fomin, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia

P2 - 16

Magnetic anisotropy of thin films ion-beam synthesized in silicon at applied magnetic field. G.G. Gumarov 1,2 , V.Yu. Petukhov 1,2 , N.G. Ivoilov 2 , E.N. Dulov 2 , V.A.  Zhikharev 3 . 1. Laboratory of Radiation Chemistry and Radiobiology, Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Physics Faculty, Kazan State University , Kazan , Russia . 3.  Kazan State Technology University , Kazan , Russia

P2 - 17

Ма gnetic structure and magnetoresistance of epitaxial iron microstructures: effects of shape and easy axis of magnetization. L.A.  Fomin, I.V. Malikov, V.Yu. Vinnichenko, G.M. Mikhailov. Institute of Microelectronic Technology, Russian Academy of Sciences , Chernogolovka , Russia

P2 - 18

Structure and electromagnetic properties of FeNi films obtained with ion plasma deposition. Bochkarev V.F., Naumov V.V., Goryachev A.A. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia

P2 - 19

Structural and optical properties of Si/ b -FeSi 2 /Si heterostructures fabricated by Fe ion implantation and Si MBE. R.I. Batalov 1 , R.M. Bayazitov 1 , N.G. Galkin 2 , E.A. Chusovitin 2 , D.L. Goroshko 2 , T.S. Shamirzaev 3 , K.S. Zhuravlev 3 . 1. Kazan Physical-Technical Institute of RAS, Kazan , Russia . 2. Institute for Automation and Control Processes of FEB RAS, Vladivostok , Russia . 3.  Institute of Semiconductor Physics of SB RAS, Novosibirsk , Russia

P2 - 20

Magnetostriction of an obliquely magnetized ferromagnetic film. L. Fetisov, S. Danilichev, S. Lebedev, G. Srinivasan. Moscow State Institute of Radio Engineering, Electronics and Automation, Moscow , Russia

P2 - 21

Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures. Vinnichenko V.Yu., Chernykh A.V., Fomin  L.A. , Mikhailov G.M.. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia

P2 - 22

Polarization switching in epitaxial multiferroic Nd:BiFeO 3 films. M. Kouznetsov 1 , T. Ustyujanin 1 , V. Muhortov 2 . 1. Moscow State Institute of Radioengineering Electronics and Automation, Moscow , Russia . 2. South Science Centre of RAS, Rostov-on-Don , Russia

Thin Films and Nanostructures Technologies II

P2 - 23

Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration. A.N. Kuturov, A.S. Stepanov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia

P2 - 24

Formation of thin ZrO 2 layers for nanotransistor gate structures by electron beam evaporation. D.G. Drozdov 2 , V.B. Kopylov 1 , I.A. Khorin 1,2 , A.A. Orlikovsky 1 , A.E. Rogozhin 1 , A.G. Vasiliev 1,3 . 1.  Institute of Physics and Technology of RAS, Moscow , Russia 2. Moscow State Institute of Radioengineering, Electronics and Automation ( Technical University ), Moscow , Russia . 3.  Federal State Unitary Enterprise "SPE Pulsar", Moscow , Russia

P2 - 25

Formation of TiN/CoSi 2 bilayer from Co/Ti/Si structure in a non-isothermal reactor. V. Rudakov, V. Gusev. Institute of physics & technology RAS, Yaroslavl branch, Russia

P2 - 26

Features of evolution of implanted profiles during RTA in non-isothermal reactor. V. Rudakov, A. Victorov, Yu. Denisenko, B. Mochalov, V. Ovcharov. Institute of physics & technology RAS, Yaroslavl branch, Russia

P2 - 27

Deposition process kinetics and structure of SiGe films obtained by LPCVD. Nalivaiko 1  O.Y., Turtsevich 1  A.S., Plebanovich 1  V.I., Gaiduk 2  P.I. 1.   RPC “Integral”, Minsk , Republic of Belarus . 2.  Belorussian State University , Minsk , Republic of Belarus

P2 - 28

Buried layers of a silicate glasses and opportunities of their practical use. S. Krivelevich, M. Gryazev. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia

P2 - 29

Ion-Beam Synthesis of Buried Lead-Silicate Layers in Silicon. Buchin Ed.Yu. , Denisenko Yu.I., Simakin S.G. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia

P2 - 30

Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth. A. Yeremyan, H. Avetisyan, K. Avjyan, G. Vardanyan, A. Khachatryan . Institute of Radiophysics and Electronics of NAS of Armenia , Ashtarak , Armenia

Plasma Technologies and Diagnostics

P2 - 31

Effect of quartz window temperature on plasma composition during STI etch. E.   Danilkin 1 ,2,3 , D. Shamiryan 1 , M.R. Baklanov 1 , W. Boullart 1 , G.Y. Krasnikov 2 , N.A. Shelepin 2 , O.P. Gutshin 2 , A.I. Mochalov 3 . 1.  IMEC vzw, Heverlee, Belgium . 2. MIKRON, Moscow , Russia . 3. Moscow Institute of Electronic Technology, Moscow , Russia

P2 - 32

Recombination kinetics of Cl atoms in Cl 2 /X (X = Ar, N 2 , O 2 , H 2 ) plasmas. D. Sitanov, A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia .

P2 - 33

An End Point Detection Method on the Base of Induced Current and an Automatic Control Device for an Ion Etching System. S.B. Simakin 1 , G.D. Kuznetsov 2 , E.A. Mitrofanov 1 . 1. The State Federal Unitary Firm “ S.A.  Vekshinsky Scientific Research Institute of Vacuum Technique”;2. Moscow State Institute of Steel and Alloys ( Technical University ), Moscow , Russia

P2 - 34

Pilot Etcher and Bosh Process for Deep Anisotropic MEMS & NEMS Etching. S.N. Averkin 1 , I.I. Amirov 2 , K.V. Rudenko 1 , I.A. Tyurin 1 , A.A. Rylov 1 , Yu.P. Baryshev 1 , V.F. Lukichev 1 , and A.A. Orlikovsky 1 . 1.  Institute of Physics and Technology RAS, Moscow , Russia . 2. Yaroslavl Branch of the Institute of Physics and Technology, RAS, Yaroslavl , Russia

P2 - 35

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P2 - 37

Measurement of atomic hydrogen flow density during GaAs surface cleaning. V.A. Kagadei, E.V. Nefyodtev, D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, Siberian Branch, Russian Academy of Science , Tomsk , Russia

P2 - 38

Ionized metal PVD with a hollow cathode magnetron. N. Poluektov, V. Kharchenko, I.  Kamyschov, Yu. Tsar'gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia

P2 - 39

Low Pressure Radio-Frequency Plasmas in the Nanolayers Formation Processes on the Surface of Construction Materials. I.Sh. Abdullin 1 , V.S. Zheltukhin 2 , I.R. Sagbiev 1 , R.F. Sharafeev 1 . 1.  Kazan State Technological University, Kazan , Russia . 2.  Kazan State University , Kazan , Russia

Micro- and Nanostructure Characterization

P2 - 40

Dynamical diffraction of femtosecond X-ray pulses by deformed crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia

P2 - 41

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Possibilities of research of porous systems and nanomaterials by method of positron annihilation spectroscopy. 1 Grafutin V.I., 1 Funtikov Yu.V., 2 Kalugin V.V., 2 Nevolin V.K., 1,2 Svetlov-Prokop'ev E.P., 2 Timoshenkov S.P., 1 Zaluzhnyi A.G. 1 .«State Science Centre of the Russian Federation - A.I.Alikhanov Institute for theoretical and experimental physics» , Moscow , Russia . 2. Moscow Institute of Electronic Technology ( Technical University ), Zelenograd, Moscow , Russia

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Application of high resolution computerized white light interferometry for characterization of MEMS structures. G. Malovichko, V. Kal'nov, K. Rudenko. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia

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New approach in the determination of the dependency of surface charge density on semiconductor surface potential based on voltage–capacity analysis of the depletion region of MIS-structures. G.V. Chucheva * , A.G. Zhdan. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia

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Experimental determination of the potential profile in the insulating layers on the basis of current-voltage characteristics of tunneling MOS diodes. E. Goldman, A. Zhdan, N. Kukharskaya. The Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow Region , Russia

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Investigation of CMOS transistor layers produced using salicide technology by SIMS and AES methods. E. Kirilenko 1 , E. Kouznetsov 2 , A. Kozlitin 1 , E. Rybachek 2 , A.Trifonov 1 . 1.  F.V.Lukin Scientific Research Institute of Physical Problems, Moscow , Russia ; 2. Moscow Institute of Electronic Technology, Research manufacturing complex « Technological Center»

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Delayed Posters

D1 - 01

Effect of gamma-irradiation on reliability and operation characteristics of AlGaN/GaN HEMTs. A.E. Belyaev 1 , R.V. Konakova 1 , S.A.  Vitusevich 2 , B.A. Danilchenko 3 , N.S. Boltovets 4 , Yu.N. Sveshnikov 5 , Z. Bougrioua 6 . 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine , Kiev , Ukraine . 2.  Institut fur Bio- und Nanosysteme and CNI – Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Julich, Julich , Germany . 3.  I nstitute of Physics , National Academy of Sciences of Ukraine , Kiev , Ukraine . 4. State Enterprise Research Institute “Orion”, Kiev , Ukraine . 5.   Close Corporation “Elma-Malakhit”, Zelenograd , Russia . 6.  Centre de Recherche sur l'Heteroepitaxie et ses Applications, CNRS, Valbonne, France

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The analysis of mismatch of physicotechnical parameters of semiconductor devices. N. Zaitsev, Y. Brukhova. 1. Moscow Institute of Electronic Technology, Technical University , Moscow , Russia

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